کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10642348 | 997649 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Transport properties of a lateral semiconductor quantum dot defined by a single connected metallic front-gate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We present studies on the electric transport in a lateral GaAs/AlGaAs quantum dot defined by a patterned single connected metallic front-gate. This gate design allows to easily couple a large number of quantum dots and therefore holds high potential in the design of new materials with tailor-made band structures based on quantum dot superlattices of controlled shape. Clear Coulomb diamond structures and well pronounced tunneling peaks observed in experiment indicate that single-electron control has been achieved. However, the dependence on electron density in the heterostructure embedding the dot, which is controlled by an additional back-gate, reveals that transport characteristics are strongly influenced supposedly by potential fluctuations in the dot and lead regions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 25, Issue 4, January 2005, Pages 472-478
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 25, Issue 4, January 2005, Pages 472-478
نویسندگان
Andreas Richter, Ken-ichi Matsuda, Tatsushi Akazaki, Tadashi Saku, Hiroyuki Tamura, Yoshiro Hirayama, Hideaki Takayanagi,