Temperature dependence of the electron distribution in a GaAs matrix with embedded InAs quantum dots

We report on the effect of the Debye averaging process on the CV characteristics of a sample containing four coupled planes of InAs self-assembled quantum dots. The observed electron distribution presented a dynamical dependence of the temperature during the C-V measurements which was explained in terms of the screening length dependence on the temperature. In addition, using the C-V data, we calculated the electron density at the planes containing the InAs dots and we have observed a high-temperature stability: the electron density at the quantum dots remained constant over a large range of temperature.