Thermal emission and band-filling effects on the photoluminescence rise time of InGaAs/InAs/GaAs quantum dots

In this paper, we present an experimental study of the thermal emission and band-filling effects on the rise time in high-quality InGaAs/InAs/GaAs quantum dots emitting at 1.2 μm at 10 K. At excitation density of 104 W cm−2, the photoluminescence rise time, which is dominated by the relaxation time, of the ground and first excited states are independent of temperature (40 ps). At excitation density of 5600 W cm−2 the ground (first excited) state photoluminescence rise time varies from 90 ps (110 ps) at 10 K to 40 ps (70 ps) at 160 K. This behavior is attributed to the band-filling and the thermal emission effects on the efficiency of the relaxation.