کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10643722 998866 2005 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Magnetic field effect on the binding energy of a hydrogenic impurity in coaxial GaAs/ AlxGa1−xAs quantum well wires
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Magnetic field effect on the binding energy of a hydrogenic impurity in coaxial GaAs/ AlxGa1−xAs quantum well wires
چکیده انگلیسی
We propose a coaxial cylindrical quantum well wire (QWW) system, in which two conducting cylindrical layers are separated by an insulating layer. The ground state binding energy of a hydrogenic impurity subjected to uniform magnetic field applied parallel to the wire axis is studied within a variational scheme as a function of the inner barrier thickness for two different impurity positions and various barrier potentials. The ground state energy and wave function in the presence of a magnetic field is directly calculated using the fourth-order Runge-Kutta method. It is found that the binding energy in critical barrier thickness shows a sharp increase or decrease depending on the impurity position and magnetic field strength. The main result is that a sharp variation in the binding energy, which may be important in device applications, depends strongly not only on the location of the impurity but also on the magnetic field and the geometry of the wire.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 37, Issue 4, April 2005, Pages 281-291
نویسندگان
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