Plasma-assisted electroepitaxy of GaN layers from the liquid Ga melt

► We have studied a novel approach for the growth of GaN layers ► We have studied Plasma-assisted electroepitaxy (PAEE) ► We have used the plasma process for producing high concentrations of N in the Ga ► We have used the electroepitaxy to transfer the N species to the growth interface ► We have demonstrated continuous GaN layers by PAEE from liquid Ga melt