Comparison of the strain of GaN films grown on MOCVD-GaN/Al2O3 and MOCVD-GaN/SiC samples by HVPE growth

► GaN films were successfully grown on MGA and MGS samples by HVPE method. ► Comparative studies on the strain of GaN films on MGA and MGS using Raman. ► Stress grown on MGS substrate is much smaller than that grown on MGA. ► Stress enhanced gradually as a function of increasing the measurement depth.