کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707535 | 1023748 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and characterization of InGaN blue LED structure on Si(1Â 1Â 1) by MOCVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
High-performance InGaN blue light-emitting diodes (LEDs) on Si(1 1 1) substrates were fabricated by metalorganic chemical vapor deposition. Crack-free films were obtained using Ga-rich GaN high-temperature buffer. The full-width at half-maximum (FWHM) of the (0 0 2) X-ray rocking curve and the (1 0 2) X-ray rocking curve were 343 and 520 arcsec, respectively, which indicate that the LED wafer on Si is of high crystalline quality. The operating voltage of 3.8 V, turn-on voltage about 2.5 V and series resistance of 47 Ω were obtained for the LED. The electroluminescence peaks at 460 nm with a FWHM about 28 nm at 20 mA current. In addition, the LED shows an EL intensity of 20 mcd at an injection current of 20 mA. These characteristics are comparable to those of LED on sapphire.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 285, Issue 3, 1 December 2005, Pages 312-317
Journal: Journal of Crystal Growth - Volume 285, Issue 3, 1 December 2005, Pages 312-317
نویسندگان
Chunlan Mo, Wenqing Fang, Yong Pu, Hechu Liu, Fengyi Jiang,