کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707602 | 1023760 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We discuss the growth and characterization of homoepitaxial GaN layers and AlGaN/GaN high electron mobility transistor (HEMT) structures grown by plasma-assisted molecular beam epitaxy (MBE) on freestanding n-GaN substrates. The GaN substrates were fabricated by hydride vapor phase epitaxy and exhibit low dislocation densities of â¼107Â cmâ2. The best MBE-grown homoepitaxial epilayers on these substrates were grown in the gallium droplet regime. Root-mean-square roughnesses of these layers were 3.5-4.0Â Ã
over 5Ã5 μm2 regions. AlGaN/GaN HEMT structures were grown on these substrates and exhibit room-temperature Hall mobilities of 1920 cm2/V s at an electron sheet density of 0.9Ã1013 cmâ2. Electrical isolation of the two-dimensional electron gas from the conductive substrate was accomplished using a Be:GaN buffer. HEMT devices were photolithographically defined and DC and RF device characteristics were measured. Off-state breakdown voltages of 90 V, saturated drain currents of nearly 700 mA/mm, and gate leakage currents of 0.07 mA/mm were observed on unpassivated devices. Preliminary results on RF performance and device reliability are presented and discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 281, Issue 1, 15 July 2005, Pages 32-37
Journal: Journal of Crystal Growth - Volume 281, Issue 1, 15 July 2005, Pages 32-37
نویسندگان
D.F. Storm, D.S. Katzer, J.A. Mittereder, S.C. Binari, B.V. Shanabrook, X. Xu, D.S. McVey, R.P. Vaudo, G.R. Brandes,