Thermodynamic analysis of AlGaN HVPE growth

A thermodynamic analysis of the hydride vapor phase epitaxy (HVPE) of AlGaN using AlCl3 and GaCl as group III precursors is described. For a range of values on the input ratio, temperature, and the partial pressure of hydrogen in the carrier gas, we calculated the equilibrium partial pressures and the driving force for AlN and GaN deposition in AlGaN. As a result, we show that controllable AlGaN HVPE is possible under a low partial pressure of hydrogen (<10% hydrogen in carrier gas).