کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707728 | 1023779 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High growth rates (>30 μm/h) of 4H-SiC epitaxial layers using a horizontal hot-wall CVD reactor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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![عکس صفحه اول مقاله: High growth rates (>30 μm/h) of 4H-SiC epitaxial layers using a horizontal hot-wall CVD reactor High growth rates (>30 μm/h) of 4H-SiC epitaxial layers using a horizontal hot-wall CVD reactor](/preview/png/10707728.png)
چکیده انگلیسی
Epitaxial growth of 4H-SiC is reported at repeatable growth rates up to 32 μm/h in a horizontal hot-wall CVD reactor at temperatures between 1530 and 1560 °C. The growth rate as a function of silane (the source of silicon) flow was studied. The doping concentration was also investigated. The conversion from p- to n-type conductivity occurred when the Si/C ratio was changed from 1.0 to 1.2. Films up to 65 μm thick were grown with a growth rate of 32 μm/h. The surface roughness increased slightly for thicker films, with the occasional incorporation of carrot-like and triangular defects. The structural quality of the films, measured by X-ray diffraction, is comparable to the best results reported in the literature for 4H-SiC.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 285, Issue 4, 15 December 2005, Pages 486-490
Journal: Journal of Crystal Growth - Volume 285, Issue 4, 15 December 2005, Pages 486-490
نویسندگان
R.L. Myers, Y. Shishkin, O. Kordina, S.E. Saddow,