کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10714377 | 1025587 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The influence of substrate temperature on electrical properties of Cu/CdS/SnO2 Schottky diode
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Polycrystalline CdS samples on the SnO2 coated glass substrate were obtained by vacuum evaporation method at low substrate temperatures (TS=200 and 300Â K) instead of the commonly used vacuum evaporation at high substrate temperatures (TS>300Â K). X-ray diffraction studies showed that the textures of the films are hexagonal with a strong (0Â 0Â 2) preferred direction. Circular Cu contacts were deposited on the upper surface of the CdS thin films at 200Â K by vacuum evaporation. The effects of low substrate temperature on the current-voltage (I-V) characteristics of the Cu/CdS/SnO2 structure were investigated in the temperature range 100-300Â K. The Cu/CdS (at 300Â K)/SnO2 structure shows exponential current-voltage variations. However, I-V characteristics of the Cu/CdS (at 200Â K)/SnO2 structure deviate from exponential behavior due to high series resistance. The diodes show non-ideal I-V behavior with an ideality factor greater than unity. The results indicate that the current transport mechanism in the Cu/CdS (at 300Â K)/SnO2 structure in the whole temperature range is performed by tunneling with E00=143Â meV. However, the current transport mechanism in the Cu/CdS (at 200Â K)/SnO2 structure is tunneling in the range 200-300Â K with E00=82Â meV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issue 23, 1 December 2011, Pages 4355-4360
Journal: Physica B: Condensed Matter - Volume 406, Issue 23, 1 December 2011, Pages 4355-4360
نویسندگان
M. Tomakin, M. AltunbaÅ, E. Bacaksız,