کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1446723 | 988624 | 2012 | 8 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti1−xCrxN films Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti1−xCrxN films](/preview/png/1446723.png)
Reactive-sputtered epitaxial Ti1−xCrxN films are ferromagnetic in the range of 0.17 ⩽ x ⩽ 0.51 due to the Cr–N–Cr double-exchange interaction below the Curie temperature (TC). The TC first increases, then decreases as x increases, and a maximum of 120 K appears at x = 0.47. All of the films are metallic with a transition near TC. A resistivity minimum ρmin is observed below 60 K in the films with 0.10 ⩽ x ⩽ 0.51 due to the effects of the weak localization and electron–electron interaction. The negative magnetoresistance (MR) is caused by the double-exchange interaction below TC and the weak localization can also contribute to MR below Tmin where ρmin appears. The x -dependent electron carrier densities reveal that the ferromagnetism is not from the carrier-mediated mechanism. The anomalous Hall resistivity follows the relation of ρxyA∝ρxx2, which is from the side-jump mechanism.
Journal: Acta Materialia - Volume 60, Issue 9, May 2012, Pages 3690–3697