کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1447058 | 988633 | 2011 | 12 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Diffusion processes in a migrating interface: The thick-interface model Diffusion processes in a migrating interface: The thick-interface model](/preview/png/1447058.png)
During a solid/solid diffusive phase transformation from a parent β-phase to a product α-phase, dissipative processes due to diffusion in the bulk phases as well as rearrangement of the crystal lattice and diffusion in the interfacial region occur. A model has been developed that accounts for all the above-mentioned dissipative processes. By means of this thick-interface model it is possible to assign a finite thickness and a finite mobility to the interface. The evolution of the mole fraction profiles of the components in the bulk phases and in the interface can be simulated from a given initial state until a steady state or equilibrium is attained. Based on this theoretical framework the kinetics of the γ/α phase transformation in the Fe-rich Fe–Cr–Ni system is simulated. Starting from a certain initial composition the transformation kinetics exhibits the features of a massive or a bulk diffusion controlled transformation depending on temperature.
Journal: Acta Materialia - Volume 59, Issue 12, July 2011, Pages 4775–4786