کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1447657 | 988651 | 2011 | 13 صفحه PDF | دانلود رایگان |
The synchronized lateral spreading and through-penetration of liquid and solid gallium (Ga) in supported thin polycrystalline films of silver (Ag) were studied. The spreading and penetration kinetics were presumably controlled by a common mechanism. The spreading rate in the 0.5 μm thick film was found to be constant with time. The activation energies of the process responsible for spreading/penetration of liquid and solid Ga were EL ≈ 28.9 ± 4.8 kJ mol−1 and ES ≈ 48.2 ± 9.6 kJ mol−1, respectively. Grain boundary grooving, with Ag diffusion out of the groove either through liquid Ga or through solid Ga, was suggested as a possible mechanism of the spreading and penetration. The model proposed reproduced the observed spreading/penetration rates and gave reasonable estimates of the energies ES and EL.
Journal: Acta Materialia - Volume 59, Issue 3, February 2011, Pages 914–926