کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1448812 | 988684 | 2009 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (1Â 0Â 0) thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
We have synthesized and characterized epitaxial and stoichiometric Ba(Zn1/3Ta2/3)O3 (1 0 0) dielectric thin films grown on MgO (1 0 0) substrates by pulsed laser deposition. Advanced electronic structure calculations were used to guide the interpretation of the experimental data. Zn-enriched targets and high oxygen pressures were used to compensate for Zn loss during film growth. The Ba(Zn1/3Ta2/3)O3 films had an indirect optical band gap of â¼3.0 eV and a refractive index of 1.91 in the visible spectral range. Zn-Ta B-site ordering was not observed in the Ba(Zn1/3Ta2/3)O3 thin film X-ray diffraction data. A dielectric constant of 25 and dissipation factor of 0.0025 at 100 kHz were measured using the interdigital capacitor method. The Ba(Zn1/3Ta2/3)O3 films exhibited a small thermally activated ohmic leakage current at high fields (<250 kV cm-1) and high temperatures (<200 °C) with an activation energy of 0.85 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 57, Issue 2, January 2009, Pages 432-440
Journal: Acta Materialia - Volume 57, Issue 2, January 2009, Pages 432-440
نویسندگان
Z.Z. Tang, S.J. Liu, R.K. Singh, S. Bandyopadhyay, I. Sus, T. Kotani, M van Schilfgaarde, N. Newman,