Retention of the Goss orientation between microbands during cold rolling of an Fe3%Si single crystal

An FeSi single crystal with an initial {1 1 0}〈0 0 1〉 orientation, also referred to as Goss orientation, was cold rolled up to a thickness reduction of 89%. Most of the crystal volume rotated into the two symmetrical {1 1 1}〈1 1 2〉 orientations. However, a weak Goss component remained in the highly strained material, even though the Goss orientation is mechanically unstable under plane strain loading. Two types of Goss-oriented regions were discernable in the material subjected to 89% reduction. It appeared that these two types of Goss regions have different origins. Goss grains that were found aligned in shear bands form during straining. A second type of Goss region was found between microbands where the initial Goss orientation was retained.