کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1449991 | 988719 | 2007 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A direct method of determining complex depth profiles of residual stresses in thin films on a nanoscale
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
A cantilever method of determining complex depth profiles of residual stresses is presented by means of a 840 nm thin Ni film on a Si substrate. The technique developed is based on the fabrication of a micro-cantilever and the subsequent gradual reduction of film thickness using a focused ion beam workstation. The deflection as a function of film thickness is measured directly from SEM images, and the stress distribution in the thin film is determined by means of a straightforward calculation procedure. The method can be applied to crystalline as well as amorphous materials and permits stress profiles on a nanoscale to be determined.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 55, Issue 14, August 2007, Pages 4835–4844
Journal: Acta Materialia - Volume 55, Issue 14, August 2007, Pages 4835–4844
نویسندگان
S. Massl, J. Keckes, R. Pippan,