کد مقاله کد نشریه سال انتشار مقاله انگلیسی ترجمه فارسی نسخه تمام متن
1450534 988737 2006 9 صفحه PDF سفارش دهید دانلود رایگان
عنوان انگلیسی مقاله ISI
Anelastic behavior of copper thin films on silicon substrates: Damping associated with dislocations
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موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Anelastic behavior of copper thin films on silicon substrates: Damping associated with dislocations
چکیده انگلیسی

A dynamic measurement system has been developed to investigate damping in thin metal films. This system includes a vacuum chamber, in which a free-standing bi-layer cantilever sample is vibrated using an electrostatic force, and a laser interferometer to measure the displacement and velocity of the sample. With this equipment, internal friction as low as 10−5 in micrometer thick metal films in the temperature range 300–800 K can be measured. Using this system, the internal friction of Cu thin films was measured and an activation energy of 1.47 ± 0.05 eV was obtained from the internal friction peaks. Based on the dependence of the internal friction on the temperature, the frequency and the thickness of the film, we suggest that this activation energy points to a dragging mechanism of jogs accompanied by vacancy diffusion along the dislocation core. The proposed mechanism is modeled and compared with experimental results.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 54, Issue 3, February 2006, Pages 679–687
نویسندگان
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