Hybrid p-type copper sulphide coated zinc oxide nanowire heterojunction device

• Developed a fully solution-based process for deposition of ZnO-based heterojunction.
• Fabricated a novel device using copper sulphide and zinc oxide nanowires.
• The maximum process temperature used during this study was 90 °C and can replicated on plastic substrate.
• The CuS coated ZnO nanowires enhances light absorption and exhibit photovoltaic behaviour.

A novel heterojunction was formed between zinc oxide nanowires and copper sulphide. The proposed device was fabricated by a fully solution-based process that consists of hydrothermal growth method and chemical bath deposition. The optoelectronic properties of the proposed heterojunction were evaluated by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, UV–vis spectroscopy, photoluminescence measurements and current voltage characteristics.

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