Transition from positive to negative magnetoresistance induced by a constriction in semiconductor nanowire

• Magnetotransport in InSb nanowire with a constriction is calculated.
• Change of sign of magnetoresistance as a function of the constriction radius.
• Combined effect of the geometric constriction and the spin Zeeman splitting.
• Intentionally introduced constriction may serve as a spintronic device.

We have studied the magnetotransport through an indium antimonide (InSb) nanowire grown in [111] direction, with a geometric constriction and in an external magnetic field applied along the nanowire axis. We have found that the magnetoresistance is negative for the narrow constriction, nearly zero for the constriction of some intermediate radius, and takes on positive values for the constriction with the radius approaching that of the nanowire. For all magnitudes of the magnetic field, the radius of constriction at which the change of the magnetoresistance sign takes place has been found to be almost the same as long as other geometric parameters of the nanowire are fixed. The sign reversing of the magnetoresistance is explained as a combined effect of two factors: the influence of the constriction on the transverse states and the spin Zeeman effect.