Fabrication of particular structures of hexagonal boron nitride and boron–carbon–nitrogen layers by anisotropic etching

• Demonstrated anisotropic etching of h-BN for nanoribbons fabrication.
• Synthesis of BCN layers using mixture of solid sources and their anisotropic etching.
• Raman studies confirm B and N incorporation in graphene and BCN layer formation.
• SiO2 nanoparticles incorporated during growth assisted H2-induced etching process.
• The etching process is significant to fabricate various h-BN related novel structures.

Anisotropic etching of hexagonal boron nitride (h-BN) and boron–carbon–nitrogen (BCN) basal plane can be an exciting platform to develop well-defined structures with interesting properties. Here, we developed an etching process of atomically thin h-BN and BCN layers to fabricate nanoribbons (NRs) and other distinct structures by annealing in H2 and Ar gas mixture. BCN and h-BN films are grown on Cu foil by chemical vapor deposition (CVD) using solid camphor and ammonia borane as carbon, nitrogen and boron source, respectively. Formation of micron size well-defined etched holes and NRs are obtained in both h-BN and BCN layers by the post growth annealing process. The etching process of h-BN and BCN basal plane to fabricate NRs and other structures with pronounced edges can open up new possibilities in 2D hybrid materials.

Anisotropic etching of hexagonal boron nitride and boron–carbon–nitrogen layers to fabricate nanoribbons and distinct etched structures by annealing in H2 and Ar gas mixture.Figure optionsDownload as PowerPoint slide