کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1543857 1512870 2016 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Coulomb drag in topological insulator films
ترجمه فارسی عنوان
کولوم در فیلم های عایق بندی توپولوژیکی بکشید
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی
We study Coulomb drag between the top and bottom surfaces of topological insulator films. We derive a kinetic equation for the thin-film spin density matrix containing the full spin structure of the two-layer system, and analyze the electron-electron interaction in detail in order to recover all terms responsible for Coulomb drag. Focusing on typical topological insulator systems, with a film thicknesses d up to 6 nm, we obtain numerical and approximate analytical results for the drag resistivity ρD and find that ρD is proportional to T2d−4na−3/2np−3/2 at low temperature T and low electron density na,p, with a denoting the active layer and p the passive layer. In addition, we compare ρD with graphene, identifying qualitative and quantitative differences, and we discuss the multi-valley case, ultra thin films and electron-hole layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 79, May 2016, Pages 72-79
نویسندگان
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