کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1544001 1512877 2015 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Small-signal modeling of graphene barristors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Small-signal modeling of graphene barristors
چکیده انگلیسی

This paper presents a small-signal model for graphene barristor, a promising device for the future nanoelectronics industry. Because of the functional similarities to the conventional FET transistors, the same configuration and parameters, as those of FETs, are assumed for the model. Transconductance, output resistance, and parasitic capacitances are the main parameters of the small signal equivalent circuit modeled in this work. Recognizing the importance of physical modeling of novel semiconductor devices, we develop physical compact expressions for the device radio-frequency characteristics. Furthermore, we clarify the physics behind the variation of the characteristics as the device parameters change. We also validate our model results with available simulation results. Impact of equilibrium Schottky barrier height of the graphene–silicon junction on the radio frequency performance of barristor is investigated, too.

We model the parameters of the small signal equivalent circuit of graphene barristor and clarify the physics behind the variation of the RF characteristics of the device as the barristor parameters change.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 72, August 2015, Pages 95–100
نویسندگان
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