کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1544045 1512876 2015 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhanced Seebeck effect in graphene devices by strain and doping engineering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Enhanced Seebeck effect in graphene devices by strain and doping engineering
چکیده انگلیسی


• Investigate electronic transport and thermoeletric effects in graphene devices by tight binding calculations.
• Propose to use strain and doping engineering to enlarge energy gap and Seebeck effect.
• Seebeck coefficient can reach a value higher than 1.4 mV/K.

In this work, we investigate the possibility of enhancing the thermoelectric power (Seebeck coefficient) in graphene devices by strain and doping engineering. While a local strain can result in the misalignment of Dirac cones of different graphene sections in the k-space, doping engineering leads to their displacement in energy. By combining these two effects, we demonstrate that a conduction gap as large as a few hundred meV can be achieved and hence the enhanced Seebeck coefficient can reach a value higher than 1.4 mV/K in graphene doped heterojunctions with a locally strained area. Such hetero-channels appear to be very promising for enlarging the applications of graphene devices as in strain and thermal sensors.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 73, September 2015, Pages 207–212
نویسندگان
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