A structurally-controllable spin filter in a δ-doped magnetically modulated semiconductor nanostructure with zero average magnetic field

We report on a theoretical investigation of spin-polarized transport in a δ-doped magnetically modulated semiconductor nanostructure, which can be experimentally realized by depositing a ferromagnetic stripe on the top of a semiconductor heterostructure and by using the atomic layer doping technique such as molecular beam epitaxy (MBE). It is shown that although such a nanostructure has a zero average magnetic filed, a sizable spin polarization exists due to the Zeeman splitting mechanism. It is also shown that the degree of spin polarization varies sensitively with the weight and/or position of the δ-doping. Therefore, one can conveniently tailor the behaviour of the spin-polarized electron by tuning the δ -doping, and such a device can be employed as a controllable spin filter for spintronics.