Simulation analysis of a novel fully depleted SOI MOSFET: Electrical and thermal performance improvement through trapezoidally doped channel and silicon-nitride buried insulator

Simulation analysis of a novel fully depleted SOI MOSFET: Electrical and thermal performance improvement through trapezoidally doped channel and silicon-nitride buried insulator

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 69, May 2015, Pages 27-33

Hadi Shahnazarisani, Saeed Mohammadi,