A scheme for a topological insulator field effect transistor

• A topological insulator based Field effect transistor is proposed.
• It displays a switching effect with high on/off current ratio.
• It displays a negative differential conductance with a good peak to valley ratio.

We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio.

We investigate the transfer characteristics and output characteristics of the topological insulator field effect transistor with a ferromagnetic topological insulator channel, using the transfer matrix method and Landauer formula.Figure optionsDownload as PowerPoint slide