کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1544216 | 1512880 | 2015 | 4 صفحه PDF | دانلود رایگان |
• A topological insulator based Field effect transistor is proposed.
• It displays a switching effect with high on/off current ratio.
• It displays a negative differential conductance with a good peak to valley ratio.
We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio.
We investigate the transfer characteristics and output characteristics of the topological insulator field effect transistor with a ferromagnetic topological insulator channel, using the transfer matrix method and Landauer formula.Figure optionsDownload as PowerPoint slide
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 69, May 2015, Pages 360–363