کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1544505 1512890 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The I−V characteristics of a graphene tunnel diode
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
The I−V characteristics of a graphene tunnel diode
چکیده انگلیسی
Graphene is a 2D carbon allotrope in which electrons behave as massless Dirac fermions in a (1+2)-D relativistic space-time near the so-called Dirac points of the Brillouin zone of a honeycomb lattice, rendering very unusual electronic properties. Here, the physics of a graphene tunnel diode is explored. The p-n configuration can be achieved by means of graphene doping. The transfer Hamiltonian method, incorporating the main features of relativistic tunneling of Dirac massless fermions in graphene permits the prediction of the I−V characteristics for graphene tunnel junctions in distinct configurations, and, in particular, the graphene diode.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 59, May 2014, Pages 1-5
نویسندگان
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