کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1545287 | 997589 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
InGaAs/GaAs quantum dots within an effective approach
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
An effective approach for describing the electronic structure of InGaAs/GaAs quantum dots (QDs) is presented. We model QDs based on a single sub-band approach with an energy-dependent electron effective mass. The model assumes that the total effect of inter-band interactions, strain and piezoelectricity can be taken into account by an effective potential. Using this approximation, we define a strength parameter of the effective potential to reproduce capacitance-gate-voltage (CV) experimental data for InAs/GaAs QDs. In the present work, we expand the model to describe InxGa1âxAs QDs with significant Ga fractions. We find that our model accurately describes CV and photoluminescence (PL) data for QDs, assuming 22% Ga fractions, and also reproduces the experimental data for Coulomb shifts of exciton complexes (Xâ, X+, XX). We compared our results with those from atomistic pseudopotential and eight-band kp-Hamiltonian approaches. The strength of the electron and heavy hole confinements is found to be weaker in the kp-model than in the atomistic pseudopotential approach.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 41, Issue 7, June 2009, Pages 1358-1363
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 41, Issue 7, June 2009, Pages 1358-1363
نویسندگان
I. Filikhin, V.M. Suslov, M. Wu, B. Vlahovic,