کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1545642 | 997598 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effects of recombination lifetime on efficiency and J–V characteristics of InxGa1−xN/GaN quantum dot intermediate band solar cell
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We introduce a new third generation of solar cell structure which inserts different-sized quantum dots in the active region of a p–i–n structure. Generating an intermediate band in the bandgap of the host material makes a good overlap with a part of solar spectrum. The effect of the recombination mechanisms on efficiency and current–voltage characteristics of this intermediate band solar cell is calculated. We deduce that the increase in recombination lifetime of the excited carriers can improve the characteristics of this structure. This result can be a route which helps us to take the effect on solar cell characteristics into consideration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 9, July 2010, Pages 2353–2357
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 9, July 2010, Pages 2353–2357
نویسندگان
Nima Es’haghi Gorji, Hossein Movla, Foozieh Sohrabi, Ahmad Hosseinpour, Meisam Rezaei, Hassan Babaei,