Atomic force microscopy study of the cleavage surfaces of In4Se3 layered semiconductor crystal

The topography of the (1 0 0) cleavage surfaces of In4Se3 layered semiconductor crystal was analyzed by atomic force microscopy (AFM) in ultrahigh vacuum. The shape and dimensions of subsequent profiles well correspond to the lattice parameters derived from bulk crystal structure obtained by X-ray diffraction. The local force curves for the cleavage surfaces under different experimental conditions are discussed.