کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1545773 | 997602 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Negative magnetoresistance due to charge fluctuation in mono-layer graphene at the minimum conductivity point
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Negative magnetoresistance due to charge fluctuation in mono-layer graphene at the minimum conductivity point Negative magnetoresistance due to charge fluctuation in mono-layer graphene at the minimum conductivity point](/preview/png/1545773.png)
چکیده انگلیسی
We have measured magnetotransport of monolayer graphene at the minimum conductivity point in detail to study negative magnetoresistance that often appears in moderately high magnetic field. By studying several samples with different qualities, we found that negative magnetoresistance originated from potential fluctuation that leads to the residual carriers at the minimum conductivity point.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 4, February 2010, Pages 673-676
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 4, February 2010, Pages 673-676
نویسندگان
Ryuta Yagi, Seiya Fukada, Hiroaki Kobara, Norio Ogita, Masayuki Udagawa,