کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1545811 | 997602 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Single-electron spin resonance in a g-factor-controlled semiconductor quantum dot
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We demonstrate that a single electron spin in a quantum dot, of which g-factor is tuned to nearly zero, is coherently manipulated by the local gate operation. A nearly zero electron g-factor is essential for the quantum state transfer from a photon to an electron spin and ideal for long electron spin memory. The g-factor was tuned by replacing the single heterostructure, which forms the conventional quantum dot, into a single quantum well with a proper electron confinement. The obtained electron g-factor was about 0.05, which is consistent with the optically estimated g-factor. We also demonstrate that the Rabi oscillation was maintained for more than 1.5 μs
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 4, February 2010, Pages 821–824
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 4, February 2010, Pages 821–824
نویسندگان
Takeshi Kutsuwa, Makoto Kuwahara, Keiji Ono, Hideo Kosaka,