کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1546035 997606 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Cyclotron-resonance line splitting in heavily doped p-type GaAs heterojunctions
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Cyclotron-resonance line splitting in heavily doped p-type GaAs heterojunctions
چکیده انگلیسی
In this paper, we report on submillimeter magneto-absorption studies of heavily doped (1 0 0) AlGaAs/GaAs heterojunctions. We found that the CR spectra consist of two branches with cyclotron-resonance effective masses of m=0.18mo and 0.373mo. These values are close to those predicted theoretically, and can be ascribed to the inversion asymmetry-induced spin splitting. In addition, we observed anticrossing features in the CR spectra. We discuss a possible origin of such CR line behavior as a coupling of light and heavy holes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 41, Issue 2, December 2008, Pages 224-227
نویسندگان
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