کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1546211 | 997610 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effective carrier interaction in semiconductor thin films: A model-independent formula
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
It is shown that the effective carrier interaction in semiconductor thin films, which is essentially of a non-Coulomb type, depends on the layer thickness but it is not sensitive to the form of quantum well. As a consequence the analytical expression for the effective 2D interaction potential, obtained using the parabolic quantum well model, can be used as a general (model-independent) formula. As an example, we have considered the electrons localized in a quantum dot. It is demonstrated that, when the quantum well confinement is much stronger than the lateral one, the results obtained using the 2D approach with the effective potential are in a good agreement with the full 3D calculations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 5, March 2010, Pages 1633-1636
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 5, March 2010, Pages 1633-1636
نویسندگان
Nenad S. SimonoviÄ,