کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1546559 997618 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Temperature dependence of surface quantum dots grown under frequent growth interruption
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Temperature dependence of surface quantum dots grown under frequent growth interruption
چکیده انگلیسی
We grow InGaAs quantum dot (QD) at low growth rate with 70 times insertion of growth interruption in MBE system. It is found that because of the extreme growth condition, QDs exhibit a thick wetting layer, large QD height value and special surface morphology which is attributed to the In segregation effect. Temperature dependence of photoluminescence measurement shows that this kind of QDs has a good thermal stability which is explained in terms of a “group coupling” model put forward by us.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 40, Issue 3, January 2008, Pages 503-506
نویسندگان
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