کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1546576 997618 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigation of coupling in naturally occurring GaAs quantum dots
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Investigation of coupling in naturally occurring GaAs quantum dots
چکیده انگلیسی
We report on the photoluminescence (PL) imaging of GaAs quantum dots (QDs) formed by islands of quantized thicknesses in a 2 nm thick Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As quantum well (QW) by means of near-field scanning optical microscopy. Discrete spectra associated with the QDs are observed and studied. Individual QDs are imaged with a resolution of 150 nm. Energy degeneracy which is sometimes observed between nearby QDs suggests the possibility of quantum mechanically coupled dots. Constraints on the observation of coupling are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 40, Issue 3, January 2008, Pages 594-599
نویسندگان
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