کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1546790 | 997623 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Intense photoluminescence from highly stacked quantum dash structure fabricated by strain-compensation technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
We fabricated stacks of self-assembled InAs quantum dashes (QDashes) on InP(0 0 1) substrates using a new strain-compensation technique that suppresses degradation of crystal and optical properties by a large stacking number. A 30-layer stacked sample showed that the QDash structure and size uniformity were improved compared with those of a two-layer stacked sample. A stronger 1.5-μm photoluminescence emission was observed in the 30-layer stacked sample at room temperature, and this emission level is suitable for fiber-optic communication systems. In addition, optical anisotropy was observed in these samples.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 40, Issue 6, April 2008, Pages 1916-1919
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 40, Issue 6, April 2008, Pages 1916-1919
نویسندگان
Kouichi Akahane, Naokatsu Yamamoto, Shin-Ichiro Gozu, Akio Ueta, Masahiro Tsuchiya,