کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1546993 997627 2010 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electron transport in gated InGaAs and InAsP quantum well wires in selectively grown InP ridge structures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Electron transport in gated InGaAs and InAsP quantum well wires in selectively grown InP ridge structures
چکیده انگلیسی

The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam epitaxy (CBE) on pre-patterned InP substrates. To optimize the growth and micro-fabrication processes for electronic transport, we explore the Ohmic contact resistance, the electron density, and the mobility as a function of the wire width using standard transport and Shubnikov–de Haas measurements. At low temperatures the ridge structures reveal reproducible mesoscopic conductance fluctuations. We also fabricate ridge structures with submicron gate electrodes that exhibit non-leaky gating and good pinch-off characteristics acceptable for device operation. Using such wrap gate electrodes, we demonstrate that the wires can be split to form quantum dots evidenced by Coulomb blockade oscillations in transport measurements.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 10, September 2010, Pages 2622–2627
نویسندگان
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