کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547025 | 997627 | 2010 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode](/preview/png/1547025.png)
An intentional positioning of optically active quantum dots using site-selective growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated. A square array of periodic holes on GaAs substrate was fabricated with FIB of 30 keV Ga+Ga+ ions followed by an in situ annealing step. Subsequently, the patterned holes were overgrown with an optimized amount of InAs in order to achieve site-selective growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding the QDs in the intrinsic part of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77 K show interband transitions up to the fifth excited state from the QDs.
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 10, September 2010, Pages 2749–2752