کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1547062 997628 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Metal–insulator transition in a quantum well under the influence of magnetic field
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Metal–insulator transition in a quantum well under the influence of magnetic field
چکیده انگلیسی

Ionization energies of a shallow donor in a quantum well of the Cd1-xinMnxinTe/Cd1-xoutMnxoutTeCd1-xinMnxinTe/Cd1-xoutMnxoutTe superlattice system are obtained. A variational procedure within the effective mass approximation is employed in the presence of magnetic field. Within the one-electron approximation the occurrence of Mott transition is seen when the binding energy of a donor vanishes is observed. The effects of Anderson localization and exchange and correlation in the Hubbard model are included in our model. It is found that the ionization energy (i) decreases as well width increases for a given magnetic field, (ii) decreases when well width increases, (iii) the critical concentration at which the metal–insulator transition occurs is enhanced in the external magnetic field and (iv) spin polaronic shifts not only with the increase in a magnetic field but also with the well width increases. All the calculations have been carried out with finite barriers and the results are compared with available data in the literature.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 31, Issue 2, March 2006, Pages 125–131
نویسندگان
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