کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547082 | 997628 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impurity states of narrow-gap semiconductor parabolic quantum dot in the presence of extremely strong magnetic field
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
The impurity states in a narrow-gap semiconductor parabolic quantum dot in the presence of external extremely strong magnetic field are considered in adiabatic approximation framework. Moreover, the dispersion law for impurity electron is described by using the Kane's two-band approximation. The effective one-dimensional equation describing the impurity electron's state along the field is obtained. The analytical expressions for total and binding energies of impurity ground state are obtained. The dependences of total and binding energies of impurity on the value of magnetic field and on the size of quantum dot are investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 31, Issue 2, March 2006, Pages 228-231
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 31, Issue 2, March 2006, Pages 228-231
نویسندگان
E.M. Kazaryan, A.V. Meliksetyan, L.S. Petrosyan, H.A. Sarkisyan,