کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547239 | 1512908 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bi3.25La0.75Ti3O12 (BLT) nanotube capacitors for semiconductor memories
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report results of fabrication and examination of Bi3.25La0.75Ti3O12 (BLT) ferroelectric nanotubes. BLT nanotubes are suggested for developing 3D ferroelectric nanotube capacitors which could be used in high-density memory applications. BLT nanotubes were prepared by template-wetting process using polymeric sources where anodic aluminum oxide had been used as a template. After annealing, tubular BLT structures were crystallized inside the pores of the template. By selective etching of the template, released BLT nanotubes have been obtained. Crystallization and nucleation of the nanotubes were analyzed by XRD and FE-SEM techniques.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 37, Issues 1–2, March 2007, Pages 274–278
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 37, Issues 1–2, March 2007, Pages 274–278
نویسندگان
B.I. Seo, U.A. Shaislamov, S.-W. Kim, H.-K. Kim, B. Yang, S.K. Hong,