کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547334 | 997634 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Exploring the magnetically induced field effect in carbon nanotube-based devices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report on the high magnetic field study of transport properties of gated small diameter (quasi)-metallic single wall carbon nanotubes (CNTs). We show that initially metallic CNT devices operate as CNT field-effect transistors under strong magnetic fields. This effect results from the Aharonov-Bohm phenomena at the origin of a band gap opening in metallic nanotubes. Strong exponential magnetoresistance observed up to room temperature is the ultimate consequence of the linear increase of the band gap with a magnetic field. Finally, we show that intrinsic characteristics of a quasi-metallic CNT, such as the helical symmetry, as well as the parameters of the Schottky barriers formed at the contacts, can be deduced from temperature-dependent magnetoconductance measurements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 40, Issue 5, March 2008, Pages 1010-1013
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 40, Issue 5, March 2008, Pages 1010-1013
نویسندگان
G. Fedorov, A. Tselev, D. Jimenez, S. Latil, N.G. Kalugin, P. Barbara, D. Smirnov, S. Roche,