کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547510 | 1512909 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bilayer counterflow transport at filling factor 1 in the strong interacting regime
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We review magneto-transport properties of interacting GaAs bilayer hole systems, with very small inter-layer tunneling, in a geometry where equal currents are passed in opposite directions in the two, independently contacted layers (counterflow). In the quantum Hall state at total bilayer filling ν=1 both the longitudinal and Hall counterflow resistances tend to vanish in the limit of zero temperature, suggesting the existence of a superfluid transport mode in the counterflow geometry. As the density of the two layers is reduced, making the bilayer more interacting, the counterflow Hall resistivity (Ïxy) decreases at a given temperature while the counterflow longitudinal resistivity (Ïxx), which is much larger than Ïxy, hardly depends on density. Our data suggest that the counterflow dissipation present at any finite temperature is a result of mobile vortices in the superfluid created by the ubiquitous disorder in this system.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 34, Issues 1â2, August 2006, Pages 11-15
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 34, Issues 1â2, August 2006, Pages 11-15
نویسندگان
E. Tutuc, M. Shayegan,