کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547570 | 1512909 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Spin susceptibility and effective mass of a 2D electron system in GaAs heterostructures towards the weak interacting regime
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Spin susceptibility and effective mass of a 2D electron system in GaAs heterostructures towards the weak interacting regime Spin susceptibility and effective mass of a 2D electron system in GaAs heterostructures towards the weak interacting regime](/preview/png/1547570.png)
چکیده انگلیسی
We determined the spin susceptibility Ï and the effective mass m* towards the high density limit. Using a tunable GaAs/AlGaAs heterostructure, we can vary the 2D electron density from n=1Ã1010cm-2 to 4Ã1011cm-2. From â¼5Ã1010cm-2 to our highest densities the mass values fall â¼10% below the band mass of GaAs. The enhancement of Ï decreases monotonically from a factor of 3 to 0.88 with increasing density. It continues to follow a previously observed power law, which leads to an unphysical limit for nââ. Band structure effects affecting mass and g-factor become appreciable for large n and, when taken into account, lead to the correct limiting behavior of Ï. Numerical calculations are in qualitative agreement with our data but differ in detail.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 34, Issues 1â2, August 2006, Pages 260-263
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 34, Issues 1â2, August 2006, Pages 260-263
نویسندگان
Y.-W. Tan, J. Zhu, H.L. Stormer, L.N. Pfeiffer, K.W. Baldwin, K.W. West,