کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1547678 1512907 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles
چکیده انگلیسی

Floating gate devices with nanoparticles embedded in dielectrics have recently attracted much attention due to the fact that these devices operate as non-volatile memories with high speed, high density and low power consumption. In this paper, memory devices containing gold (Au) nanoparticles have been fabricated using e-gun evaporation. The Au nanoparticles are deposited on a very thin SiO2 layer and are then fully covered by a HfO2 layer. The HfO2 is a high-k dielectric and gives good scalability to the fabricated devices. We studied the effect of the deposition parameters to the size and the shape of the Au nanoparticles using capacitance–voltage and conductance–voltage measurements, we demonstrated that the fabricated device can indeed operate as a low-voltage memory device.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 38, Issues 1–2, April 2007, Pages 85–88
نویسندگان
, , , ,