Electron heating in Al0.15Ga0.85N/GaN heterostructures grown on p-type Si

The transport behaviors of two GaN/AlGaN two-dimensional electron systems (2DESs) grown on Si substrates were studied, and a SiNx treatment employed in sample fabrication enhanced the conductance of one of the 2DESs. We study the electron heating effect in the 2DESs experimentally, with resistances as self-thermometers. The relation of Te∼I1.42 was obtained, which is in contrast to Te∼I0.5 in the resistivity peaks in a GaAs/AlGaAs 2DES. This may be caused by the scattering effect in this sample.