کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547849 | 997646 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis on pressure dependence of microcrystalline silicon by optical emission spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Analysis on pressure dependence of microcrystalline silicon by optical emission spectroscopy Analysis on pressure dependence of microcrystalline silicon by optical emission spectroscopy](/preview/png/1547849.png)
چکیده انگلیسی
Hydrogenated microcrystalline silicon films were prepared by very high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) at 180 °C. The optical emission spectroscopy (OES) was used to monitor the plasma during the deposition process. When the pressure was enhanced from 50 to 80 Pa, the intensities of SiH*, Hα* and Hβ* increase at first and then decrease for the pressures higher than 80 Pa. The transition from microcrystalline to amorphous phase occurs when increasing the pressure at silane concentration of 5%. It was found that the intensity ratio of IHα*/ISiH* affects the growth of microcrystalline silicon. With the increase of IHα*/ISiH* the crystallnity of films was improved. There are no direct relations between the SiH* intensity and the deposition rate. The deposition rate and dark conductivity are also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 33, Issue 1, June 2006, Pages 125-129
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 33, Issue 1, June 2006, Pages 125-129
نویسندگان
Zhimeng Wu, Jian Sun, Qingsong Lei, Ying Zhao, Xinhua Geng, Jianping Xi,