کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1547877 997646 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots
چکیده انگلیسی
We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 33, Issue 1, June 2006, Pages 280-283
نویسندگان
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